Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Amorphous semiconductor
Reexamination Certificate
2005-12-27
2005-12-27
Mulpuri, Savitri (Department: 2812)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Amorphous semiconductor
C438S745000, C438S798000, C438S149000
Reexamination Certificate
active
06979632
ABSTRACT:
The present invention has as its object to provide a technique of forming a surface of a thin-film semiconductor having corrugations and smoothing the same. This is achieved by a fabrication method for thin-film semiconductors which smooths a surface of a silicon film having corrugations, comprising the steps of forming an oxidized silicon film on the surface of the silicon film, removing the oxidized silicon film which has been formed in protruding portions among the corrugations and exposing at least part of protruding portions in the silicon film, and removing the protrusions in the silicon film exposed in the previous step. In the above structure, the silicon film having corrugations has an average thickness of about 100 Å to 1000 Å (e.g. an amorphous silicon film or a crystalline silicon film crystallized by thermal processing) which is irradiated by a laser beam and crystallized or a silicon layer promoting crystallization.
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Fukunaga Takeshi
Mitsuki Toru
Ohtani Hisashi
Fish & Richardson P.C.
Mulpuri Savitri
Semiconductor Energy Laboratory Co,. Ltd.
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