Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Total dielectric isolation
Patent
1996-07-31
2000-09-19
Fourson, George
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Total dielectric isolation
438409, 438459, 438466, 438705, 438960, H01L 2176
Patent
active
061211125
ABSTRACT:
A method for fabricating a semiconductor substrate comprises the steps of employing a diffusion method to diffuse, in a silicon substrate, an element, which is capable of controlling a conductive type, and to form a diffused region, forming a porous layer in the diffused region, forming a non-porous single crystal layer on the porous layer, bonding the non-porous single crystal layer to a base substrate, while an insulation layer is provided either on a surface to be bonded of the non-porous single crystal layer or on a surface to be bonded of the base substrate, and removing the porous layer.
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Sakaguchi Kiyofumi
Yonehara Takao
Canon Kabushiki Kaisha
Fourson George
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