Fabrication method for semiconductor structure in a...

Details Fabrication method for semiconductor structure in a... Fabrication method for semiconductor structure in a...

2007-05-22

2007-05-22

Tsai, H. Jey (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S637000, C438S638000, C438S238000, C257SE27084

Reexamination Certificate

active

11061731

ABSTRACT:
The present invention provides a fabrication method for a semiconductor structure in a substrate, the semiconductor structure having at least two regions that are to be patterned differently. A fabrication of a patterned first region in the substrate, so that the semiconductor structure has a non-patterned second region and the patterned first region, is followed by a deposition of a cover layer that grows over the patterned first region, so that the cover layer above the patterned first region forms a closure, which covers over the patterned first region. This is followed by a fabrication of the patterned second region, the patterned first region remaining protected at least by the closure of the cover layer. The final step effected is a removal of the cover layer above the semiconductor structure, which now has two differently patterned regions.

REFERENCES:
patent: 6159840 (2000-12-01), Wang
patent: 19940581 (2001-04-01), None
patent: 10153310 (2003-05-01), None

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