Fabrication method for semiconductor integrated devices

Details Fabrication method for semiconductor integrated devices Fabrication method for semiconductor integrated devices

2006-01-31

2006-01-31

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S778000, C438S680000

Reexamination Certificate

active

06992022

ABSTRACT:
A process for forming the lower and upper electrodes of a high dielectric constant capacitor in a semiconductor device from an organoruthenium compound by chemical vapor deposition. This chemical vapor deposition technique employs an organoruthenium compound, an oxidizing gas, and a gas (such as argon) which is hardly adsorbed to the ruthenium surface or a gas (such as ethylene) which is readily adsorbed to the ruthenium surface. This process efficiently forms a ruthenium film with good conformality in a semiconductor device.

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Tomonori Aoyama, Masahiro Kiyotoshi, Soichi Yamazaki and Kazuhiro Eguchi, “Chemical Vapor Deposition of Ru and Its Application in (Ba,Sr) TiO3Capacitors for Future Dynamic Random Access Memories”, Jpn. J. Appl. Phys. vol. 38 (1999), pp. 2194-2199.

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