Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Having heterojunction
Patent
1997-06-12
1998-11-24
Brown, Peter Toby
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Having heterojunction
438366, 438489, 438657, 438969, H01L 21331
Patent
active
058406131
ABSTRACT:
A semiconductor device including a bipolar transistor is provided, which can reduce the base resistance of the transistor. This device includes a semiconductor base region having a first semiconductor active region of a first conductivity type in its inside. A first insulating layer is formed on the main surface of the substructure to cover the first active region. The first insulating layer has a first penetrating window exposing the first active region. A semiconductor contact region of a second conductivity type is formed on the first insulating layer. The contact region has an overhanging part which overhangs the first window. The second window is defined by the inner end of the overhanging part to be entirely overlapped with the first window. The contact region is made of a polycrystalline semiconductor. A second semiconductor active region of the second conductivity type is formed on the first active region in the first window. A semiconductor connection region of the second conductivity rope is formed in the first window to surround the second active region. The connection region is contacted with the overhanging part or the contact region and the second active region, thereby electrically interconnecting the second active region with the contact region. The connection region is made of a polycrystalline semiconductor.
REFERENCES:
patent: 5494836 (1996-02-01), Imai
patent: 5504018 (1996-04-01), Sato
Brown Peter Toby
NEC Corporation
Pham Long
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