Fabrication method for increasing the coupling efficiency of ETO

Details Fabrication method for increasing the coupling efficiency of ETO Fabrication method for increasing the coupling efficiency of ETO

1998-12-04

2000-11-28

Booth, Richard

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

438264, 438564, H01L 218247, H01L 29788

Patent

active

06153904&

ABSTRACT:
A method of manufacturing an electron tunnel oxide (ETOX) flash memory device having an improved coupling efficiency includes sequentially forming a tunnel oxide, a floating gate, a dielectric layer, and a control gate on a substrate, where the tunnel oxide and the bottom of the floating gate are formed to be narrower than the top of the floating gate, the dielectric and the control gate.

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