Semiconductor device manufacturing: process – Semiconductor substrate dicing – Having specified scribe region structure
Reexamination Certificate
2011-03-29
2011-03-29
Dang, Phuc T (Department: 2892)
Semiconductor device manufacturing: process
Semiconductor substrate dicing
Having specified scribe region structure
C438S464000, C257SE21237
Reexamination Certificate
active
07915140
ABSTRACT:
A device fabrication method for fabricating individual devices from a wafer, wherein the back side of each device is covered with an adhesive film for die bonding. The device fabrication method includes a wafer dividing step of dividing the wafer into the individual devices along a plurality of kerfs by using a dicing before grinding process, an adhesive film mounting step of mounting an adhesive film on the back side of the wafer after performing the wafer dividing step, and an adhesive film dividing step of applying a laser beam to the adhesive film along the kerfs after performing the adhesive film mounting step, thereby dividing the adhesive film along the kerfs.
REFERENCES:
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patent: 7622366 (2009-11-01), Nakamura
patent: 2004/0266138 (2004-12-01), Kajiyama et al.
patent: A 2000-182995 (2000-06-01), None
patent: A 2002-118081 (2002-04-01), None
Genda Satoshi
Kitahara Nobuyasu
Dang Phuc T
Disco Corporation
Greer Burns & Crain Ltd.
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