Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-01-24
2006-01-24
Nelms, David (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C423S600000
Reexamination Certificate
active
06989324
ABSTRACT:
A method and resultant device, in which metal nanoparticles are self-assembled into two-dimensional lattices. A periodic hole pattern (wells) is fabricated on a photoresist substrate, the wells having an aspect ratio of less than 0.37. The nanoparticles are synthesized within inverse micelles of a polymer, preferably a block copolymer, and are self-assembled onto the photoresist nanopatterns. The nanoparticles are selectively positioned in the holes due to the capillary forces related to the pattern geometry, with a controllable number of particles per lattice point.
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Badolato Antonio
Diana Frederic S.
Kramer Edward J.
Lee Seung-Heon
Petroff Pierre M.
Fulbright & Jaworski LLP
Lee Calvin
Nelms David
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