Fabrication method for an interconnect on a substrate

Details Fabrication method for an interconnect on a substrate Fabrication method for an interconnect on a substrate

2005-06-28

2005-06-28

Vinh, Lan (Department: 1765)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S613000, C438S638000, C438S745000

Reexamination Certificate

active

06911390

ABSTRACT:
Method for fabricating an interconnect on a substrate. The method includes applying a mask on the substrate, patterning the mask, so that it has an opening corresponding to the interconnect, providing the interconnect in the opening on the substrate, widening the opening in order to uncover a region laterally adjoining the interconnect, encapsulating of interconnect in the widened opening, andremoving the mask.

REFERENCES:
patent: 4861425 (1989-08-01), Greer et al.
patent: 5427983 (1995-06-01), Ahmad et al.
patent: 5656525 (1997-08-01), Lin et al.
patent: 6413851 (2002-07-01), Chow et al.
patent: 6441473 (2002-08-01), Deshmukh

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