Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1998-02-13
2000-01-25
Niebling, John F.
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
438166, 438486, H01L 2100, H01L 2120
Patent
active
060177799
ABSTRACT:
In order to fabricate a high performance thin film semiconductor device using a low temperature process in which it is possible to use low price glass substrates, a thin film semiconductor device has been fabricated by forming a silicon film at less than 450.degree. C., and, after crystallization, keeping the maximum processing temperature at or below 350.degree. C.
In applying the present invention to the fabrication of an active matrix liquid crystal display, it is possible to both easily and reliably fabricate a large, high-quality liquid crystal display. Additionally, in applying the present invention to the fabrication of other electronic circuits as well, it is possible to both easily and reliably fabricate high-quality electronic circuits.
REFERENCES:
patent: 4297392 (1981-10-01), Higashi et al.
patent: 4812328 (1989-03-01), Saitoh et al.
patent: 5114770 (1992-05-01), Echizen et al.
patent: 5192717 (1993-03-01), Kawakami
patent: 5289030 (1994-02-01), Yamazaki
patent: 5313075 (1994-05-01), Zhang et al.
patent: 5372958 (1994-12-01), Miyasaka
patent: 5482749 (1996-01-01), Telford
patent: 5488000 (1996-01-01), Zhang
patent: 5583369 (1996-12-01), Yamazaki et al.
patent: 5624873 (1997-04-01), Fonash
patent: 5648276 (1997-07-01), Hara
Masatada Horiuchi et al, "One-Decade Reduction of PN-Junction Leakage Current Using Poly-SI Interlayered SOI Structures" Proceedings of the International Electron Devices Meeting, Wash, DC Dec. 5-8, 1993.
Dec. 5, 1993, Institute of Electrical and Electronics Engineers, pp. 847-850, XP000481744.
Masumo K et al., "Low-Temperature Preparation of Poly-SI TFT by AR Laser Annealing at High Scanning Speed" Electronics & Communications in Japan, Part II--Electronics, vol. 76, No. 9, Sep. 1, 1993, pp. 112-116, XP000447931.
Yeckel, A. et al, "The Origin of Nonuniform Growth of LPCVD films from silane gase Mixtures" Journal of the Electrochemical Society, Jul. 1989, vol. 136, No. 7, ISSN 0013-4651.
Mitsutoshi Miyasaka et al, "Transistor and Physical Properties of Polycrystalline Silicon Films Prepared by Infralow-Pressure Chemical Vapor Deposition", Journal of Applied Physics, vol. 74, No. 4, Aug. 15, 1993, pp. 2870-2885.
Patent Abstracts of Japan, vol. 018, No. 573 (E-1624), Nov. 2, 1994 & JP 06 216004 A (NEC Corp), Aug. 5, 1994.
Ohshima, H., et al. "Full-Color LCDs with Completely Integrated Drivers Utilizing Low-Temperature Poly-SI TFTs", SID 93 Digest 1993, pp. 387-390.
S. Wolf, et al., Silicon Processing for the VLSI Era vol. 1, Lattice Press, 1986 (month not available).
Lebentritt Michael S.
Niebling John F.
Seiko Epson Corporation
LandOfFree
Fabrication method for a thin film semiconductor device, the thi does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Fabrication method for a thin film semiconductor device, the thi, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fabrication method for a thin film semiconductor device, the thi will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2315328