Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1996-08-19
1999-09-28
Bowers, Charles
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438659, 438649, 438651, 438683, 438685, H01L 2144
Patent
active
059603194
ABSTRACT:
A semiconductor device and a fabrication method thereof are disclosed. A silicon nitride film is formed over a silicon semiconductor substrate. Impurity ions are then implanted into desired areas of the silicon semiconductor substrate, so that nitrogen atoms and silicon atoms from the silicon nitride film are incorporated into the surface of the silicon semiconductor substrate together with introduction of impurity ions. The silicon semiconductor substrate has a minimized content of oxygen mixed thereinto and restored crystal defects filled by nitrogen atoms upon implanting of impurity ions. The fabricated semiconductor device is free from a trade-off relation between gate-electrode depletion and junction current leakage, and short-channel effects.
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Self-Aligned Titanium Silicidation by Lamp Annealing, K. Tsukamoto et al.,
Impact of Surface Proximity Gettering and Nitrided Oxide Side-Wall Spacer by Nitrogen Implantation on Sub-Quarter Micron CMOS LDD FETs, S. Shimizu
Novel Low Leakage and Low Resistance Titanium Salicide Technology with Recoil Nitrogen Achieved by Silicidation after Ion Implantation through Contamination-Restrained Oxygen Free LPCVD-Nitride Layer (SICRON), H.
Hayashida Shigeki
Iwata Hiroshi
Kakimoto Seizou
Matsuoka Toshimasa
Nakano Masayuki
Berry Renee R.
Bowers Charles
Sharp Kabushiki Kaisha
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