Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-12-21
2010-12-28
Picardat, Kevin M (Department: 2822)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S612000, C438S613000, C438S614000, C438S675000, C438S678000
Reexamination Certificate
active
07858521
ABSTRACT:
A method of electroplating includes forming a seed region to be electroplated on a first portion of a substrate, forming a ground plane on a second portion of a substrate, electrically isolating the ground plane from the seed region, electroplating the region, wherein electroplating includes causing the ground plane and the region to make electrical connection, and then removing the ground plane region on the second portion of the substrate, but not removing the electrical isolation. This creates a structure having a substrate, a passivation layer on the substrate, and at least one electroplated, metal region on the substrate such that there is contiguous contact between the metal region and the passivation layer. And, after an additional flip-chip assembly to a bond pad/heat sinking chip, results in a device having a bond pad chip having bond pads, solder beads formed on the bond pads, and a component connected to the bond pads by the solder beads. Wherein, the component has a substrate, a passivation layer on the substrate, and at least one electroplated, metal region on the substrate such that there is contiguous contact between the metal region and the passivation layer.
REFERENCES:
patent: 5072520 (1991-12-01), Nelson
patent: 5892272 (1999-04-01), Lynch
patent: 2005/0176234 (2005-08-01), Shei et al.
Chua Christopher L.
Knollenberg Clifford F.
Teepe Mark R.
Au Bac H
Marger & Johnson & McCollom, P.C.
Palo Alto Research Center Incorporated
Picardat Kevin M
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