Fabrication based on radiation sensitive resists and related pro

Details Fabrication based on radiation sensitive resists and related pro Fabrication based on radiation sensitive resists and related pro

1978-05-23

1980-06-17

Kimlin, Edward C.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

156643, 156901, 430319, 430321, 430494, 427 431, 20415913, G03C 500

Patent

active

042082110

ABSTRACT:
Radiation sensitive negative resists with requisite stability for dry processing of integrated circuits are polymerized from aromatic moieties containing halogen atoms. Halogen-aryl bridging, generally carbonaceous, increases sensitivity to radiation. Exemplary materials, copolymers prepared from aromatic and glycidyl methacrylate (GMA) comonomers, are suitable for direct processing of large-scale integrated circuits. While electron beam patterning is contemplated both for direct processing and mask making, radiation such as X-ray and deep u.v. may be used.

REFERENCES:
patent: 3885060 (1975-05-01), Hirai et al.
patent: 3953309 (1976-04-01), Gilano et al.
patent: 3996393 (1976-12-01), Cortellino et al.
patent: 4041191 (1977-08-01), Leclerc et al.
patent: 4056393 (1977-11-01), Schlesinger et al.
patent: 4061799 (1977-12-01), Brewer
patent: 4061829 (1977-12-01), Taylor
patent: 4130424 (1978-12-01), Feit et al.

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