Etching a substrate: processes – Etching of semiconductor material to produce an article...
Reexamination Certificate
2005-05-03
2005-05-03
Hassanzadeh, P. (Department: 1763)
Etching a substrate: processes
Etching of semiconductor material to produce an article...
C438S700000
Reexamination Certificate
active
06887391
ABSTRACT:
MEMS structures may be formed on a substrate by forming a series trenches filled with etch-stop material in the device layer, followed by an isotropic etch of the device material stopping on the etch-stop material. This approach provides a controlled release method where the exact timing of the isotropic release etch becomes non-critical. Further, using this method, structures with significant topology may be fabricated while keeping the wafer topology to a minimum during processing until the very end of the process. Using the method of this invention, features with large topology may be formed while keeping the wafer topology to a minimum until the very end of the process.
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Behin Behrang
Daneman Michael J.
Analog Devices Inc.
Culbert Roberts
Hassanzadeh P.
Isenberg Joshua D.
JDI Patent
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