Fabricating method of thin film transistor

Details Fabricating method of thin film transistor Fabricating method of thin film transistor

2006-06-13

2006-06-13

Smith, Zandra V. (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S166000, C438S412000

Reexamination Certificate

active

07060544

ABSTRACT:
A fabricating method of a thin film transistor includes forming an active layer of polycrystalline silicon, forming a first insulating layer on the active layer, forming a gate electrode on the first insulating layer over the active layer, doping side portions of the active layer with impurities, applying a small amount of metal to the side portions of the active layer and activating the side portions of the active layer such that the small amount of metal is adsorbed into the active layer.

REFERENCES:
patent: 5646424 (1997-07-01), Zhang et al.
patent: 5962897 (1999-10-01), Takemura et al.
patent: 6066547 (2000-05-01), Maekawa
patent: 6225197 (2001-05-01), Maekawa
patent: 6342409 (2002-01-01), Seo
patent: 2002/0036724 (2002-03-01), Ha
patent: 11-111985 (1999-04-01), None
patent: 2000-0074449 (2000-12-01), None
patent: 2001-0097962 (2001-11-01), None

Affiliated with

Also associated with

Rating

Fabricating method of thin film transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Fabricating method of thin film transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fabricating method of thin film transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3672160