Fabricating method of thin film transistor

Details Fabricating method of thin film transistor Fabricating method of thin film transistor

2011-04-12

2011-04-12

Lee, Eugene (Department: 2815)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S151000, C438S156000, C438S268000, C257SE21410, C257SE21411

Reexamination Certificate

active

07923312

ABSTRACT:
A fabricating method of a TFT includes first forming a source on a substrate. Then, a first insulation pattern layer is formed to cover parts of the source and the substrate. The first insulation pattern layer has an opening exposing a part of the source. Thereafter, a gate pattern layer is formed on the first insulation pattern layer. Then, the gate pattern layer and a second insulation pattern layer formed thereon surround the opening. Moreover, a second lateral protection wall is formed on an edge of the gate pattern layer in the opening. Afterwards, a channel layer is formed in the opening and covers the second lateral protection wall and the source. Then, a passivation layer with a contact window is formed on the channel layer and the second insulation pattern layer to expose a portion of the channel layer. Thereafter, a drain is formed on the exposed channel layer.

REFERENCES:
patent: 6383860 (2002-05-01), Maeda et al.
patent: 6548856 (2003-04-01), Lin et al.
patent: 6569715 (2003-05-01), Forbes
patent: 6998343 (2006-02-01), Sun et al.

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