Fabricating method of polysilicon thin film transistor...

Details Fabricating method of polysilicon thin film transistor... Fabricating method of polysilicon thin film transistor...

2005-03-01

2005-03-01

Loke, Steven (Department: 2811)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S166000

Reexamination Certificate

active

06861300

ABSTRACT:
A method of fabricating a thin film transistor includes providing a substrate; depositing amorphous silicon on the substrate; patterning the amorphous silicon to form a plurality of island-shaped amorphous silicon layers; forming spaces between the substrate and the amorphous silicon layers; forming a channel region, a source ohmic contact region, and a drain ohmic contact region on each of the amorphous silicon layers by ion doping the island-shaped amorphous silicon layers; forming a first insulating layer over the amorphous silicon layers; crystallizing the plurality of the island-shaped amorphous silicon layers to form a plurality of island-shaped polysilicon layers by irradiating laser beams onto the first insulating layer, wherein the plurality of the island-shaped polysilicon layers are the active layers of the thin film transistor; forming a gate electrode on the first insulating layer; and forming source and drain electrodes that contact the source and drain ohmic contact regions, respectively. The spaces formed between the substrate and silicon layers increase the grain size of the polysilicon layers.

REFERENCES:
patent: 6-163589 (1994-06-01), None

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