Fabricating method of pixel structure

Details Fabricating method of pixel structure Fabricating method of pixel structure

2006-01-12

2008-03-04

Fourson, George R. (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C257SE29291, C257SE21414

Reexamination Certificate

active

07338846

ABSTRACT:
A method for fabricating a pixel structure is provided. First, a gate, a scan line, and a first terminal are formed on a substrate. A gate insulating layer is formed over the substrate to cover the gate, the scan line, and the first terminal. After defining the semiconductor layer, the gate insulating layer is patterned to exposure the first terminal. A transparent conductive layer is formed over the substrate and a patterned photoresist layer is formed on the transparent conductive layer. The transparent conductive layer is patterned using the patterned photoresist layer as a mask, so as to define a source, a drain, a data line, a pixel electrode, a second terminal, and a contact pad. Because only four photomasks are used to implement the above method for fabricating the pixel structure, the cost of manufacturing can be reduced.

REFERENCES:
patent: 6927087 (2005-08-01), Lai
patent: 588462 (2004-05-01), None

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