Fabricating method of making a fin shaped capacitor

Details Fabricating method of making a fin shaped capacitor Fabricating method of making a fin shaped capacitor

1995-10-30

1998-11-10

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

438240, 438253, H01L 2120, H01L 218242

Patent

active

058343571

ABSTRACT:
A capacitor includes a first electrode in which a first material layer composed of a conductive oxide and a second material layer formed of a conductive material are alternately stacked. The side surface of the second material layer is recessed to form a fin-shaped structure and the second material layer is etched to have a width shorter than that of the first material layer. The capacitor also includes a second electrode and a dielectric material formed between the first electrode and the second electrode.

REFERENCES:
patent: 4700457 (1987-10-01), Matsukawa
patent: 5168073 (1992-12-01), Gonzalez et al.
patent: 5192703 (1993-03-01), Lee et al.
patent: 5416037 (1995-05-01), Sato et al.
patent: 5532182 (1996-07-01), Woo
patent: 5573967 (1996-11-01), Tseng
patent: 5656536 (1997-08-01), Wu

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