Fabricating method of GaAs substrate having V-shaped grooves

Details Fabricating method of GaAs substrate having V-shaped grooves Fabricating method of GaAs substrate having V-shaped grooves

1997-10-09

1998-10-20

Duda, Kathleen

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430314, 438 42, 438 44, G03F 700

Patent

active

058244530

ABSTRACT:
Disclosed is a fabricating method of a GaAs substrate having a V-shaped groove in a higher density, that is a double density, the method comprising the steps of forming a Si.sub.3 N.sub.4 layer on a main surface of the GaAs substrate; patterning the Si.sub.3 N.sub.4 layer using a photo-lithography to form a patterned Si.sub.3 N.sub.4 layer having a minimum width; wet-etching the GaAs substrate using the patterned Si.sub.3 N.sub.4 layer as a mask, so as to form (111) and (100) surfaces of the GaAs substrate beneath the patterned Si.sub.3 N.sub.4 ; selectively growing a GaAs film on the GaAs substrate etched thus using the patterned Si.sub.3 N.sub.4 layer as a mask so as to form the GaAs film with two (111) facets only on a (100) surface of the GaAs substrate; and removing the Si.sub.3 N.sub.4 layer. The V-shaped grooves can be formed on a GaAs substrate utilizing a difference of growth rate caused by surface orientation of the substrate, and therefore the grooves can be formed in double density.

REFERENCES:
patent: 5316967 (1994-05-01), Kaneno
Usami, et al.: "Fabrication of Sige/Si quantum wire structures on a V-Groove patterned Si substrate by gas-source Si molecular beam epitaxy"; pp. 539-541, Solid-State Electronics vol. 37, Nos. 4-6, 1994.
Tsukamoto, et al.: "Fabrication of GaAs quantum wires on epitaxially grown V grooves by metal-organic chemical-vapor deposition"; pp. 533-535, J. Appl. Phys., vol. 71(1), Jan. 1, 1992.
Kapon, et al.: "Two-dimensional quantum confinement in multiple quantum wire lasers grown by OMCVD on V-grooved substrates"; pp. 593-600, Surface Science 267(1993), North-Holland.

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