Fabricating method of a metal gate

Details Fabricating method of a metal gate Fabricating method of a metal gate

1998-07-22

1999-12-14

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

438605, H01L 21441

Patent

active

060017163

ABSTRACT:
A method of fabricating a metal gate includes forming a gate insulating layer on a provided substrate, forming a PVD titanium nitride layer on the gate insulating layer, forming a CVD titanium nitride layer on the PVD titanium nitride layer, and forming a CVD tungsten layer on the CVD titanium nitride layer. The CVD tungsten layer, the CVD titanium nitride layer, and the PVD titanium nitride layer are later patterned to form the metal gate.

REFERENCES:
patent: 5877087 (1999-02-01), Mosely et al.
Kim et al., Tungsten Silicide/Titanium compound gate for submicron cmosfet, IEEE, pp. 115-116, 1990.
Wakabayashi et al., Highly reliable W/TiN/pn-poly-Si Gate CMOS . . . , IEEE, pp. 447-450, 1996.
Lee et al., Characteristics of CMOSFETswith sputter-deposited W/TiN stack gate. VLSI Tech dig., p. 11, 1995.
Yang et al., A comparison of TiN Processes for CVD W/TiN gate electrode on 3nm Gate Oxide, IEEE, pp. 459-462, Dec. 7, 1997.
Hu et al., Feasibility of Using W/TiN as a Metal Gate for Conventional .13um CMOS Tech. and Beyond, IEEE, pp. 825-828, Jul. 1997.

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