Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2008-01-08
2008-01-08
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S158000, C257SE21414
Reexamination Certificate
active
11236831
ABSTRACT:
A horizontal electric field applying type thin film transistor substrate of a LCD device having an increased aperture ratio as well as a simplified manufacturing process. The device includes a gate line having a double layered structure including a transparent first conductive layer and an opaque second conductive layer, a data line crossing the gate line to define a pixel area; a thin film transistor connected to the gate line and the data line; a common line having first and second conductive layers and substantially parallel to the gate line; a common electrode extended from the first conductive layer of the common line in the pixel area; and a pixel electrode connected to the thin film transistor to form a horizontal electric field with the common electrode in the pixel area.
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Isaac Stanetta
Lebentritt Michael
LG.Philips LCD Co. , Ltd.
McKenna Long & Aldridge LLP
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