Fabricating method of a high voltage metal oxide...

Details Fabricating method of a high voltage metal oxide... Fabricating method of a high voltage metal oxide...

2008-05-20

2008-05-20

Weiss, Howard (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

With means to increase breakdown voltage threshold

In integrated circuit

C438S212000

Reexamination Certificate

active

11163219

ABSTRACT:
A high voltage metal oxide semiconductor device comprising a substrate, an N-type epitaxial layer, an isolation structure, a gate dielectric layer, a gate, an N-type drain region, a P-type well, an N-type source region, a first N-type well and a buried N-doped region is provided. The first N-type well is disposed in the N-type epitaxial layer under the isolation structure and on one side of the gate. The first N-type well overlaps with the N-type drain region. The buried N-doped region is disposed in the substrate under the N-type epitaxial layer and connected to the first N-type well.

REFERENCES:
patent: 2004/0195644 (2004-10-01), Mallikarjunaswamy et al.

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