Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1998-03-31
2000-02-15
Quach, T. N.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438629, 438633, 438638, 438643, 438647, 438657, H01L 2128
Patent
active
060252642
ABSTRACT:
A method for forming a barrier layer comprising the steps of first providing a semiconductor substrate that has a conductive layer already formed thereon. Then, a dielectric layer such as an organic low-k dielectric layer is deposited over the conductive layer and the semiconductor substrate. Next, an opening in formed in the dielectric layer exposing the conductive layer. Thereafter, a first barrier layer is deposited into the opening and the surrounding area. The first barrier layer can be a silicon-contained layer or a doped silicon (doped-Si) layer formed by a plasma-enhanced chemical vapor deposition (PECVD) method, a low-pressure chemical vapor deposition (LPCVD) method, an electron beam evaporation method or a sputtering method. Finally, a second barrier layer is formed over the first barrier layer. The second barrier layer can be a titanium/titanium nitride (Ti/TiN) layer, a tungsten nitride (WN) layer, a tantalum (Ta) layer or a tantalum nitride (TaN) layer.
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Copy of Search Report for FR 9812017.
Huang Yimin
Lur Water
Sun Shih-Wei
Yew Tri-Rung
Quach T. N.
United Microelectronics Corp.
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