Fabricating method for thin film transistor substrate and...

Details Fabricating method for thin film transistor substrate and... Fabricating method for thin film transistor substrate and...

2005-12-21

2008-12-16

Nguyen, Cuong Q (Department: 2811)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S480000, C977S938000

Reexamination Certificate

active

07465612

ABSTRACT:
A thin film transistor substrate and its fabrication method are discussed. According to an embodiment, the fabricating method of a thin film transistor substrate includes forming a gate electrode on a substrate; forming a gate insulating film on the gate electrode, the gate insulating film having a groove in an area corresponding to an area where an active layer of a thin film transistor is to be formed; forming the active layer of the thin film transistor by use of a nanowire in the groove of the gate insulating film; and forming a source electrode and a drain electrode on the active layer.

REFERENCES:
patent: 7365395 (2008-04-01), Stumbo et al.
patent: 7405129 (2008-07-01), Afzali-Ardakani et al.
patent: 2006/0226425 (2006-10-01), Chae et al.

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