Fabricating method for silicon structures

Details Fabricating method for silicon structures Fabricating method for silicon structures

1992-06-18

1993-04-13

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 156644, 156645, 156647, 156653, 156657, 1566611, 156662, H01L 21306, B44C 122, C03C 1500, C03C 2506

Patent

active

052019870

ABSTRACT:
A precision etched, three dimensional device is fabricated from a silicon wafer by etching from one side of the wafer. A chemical masking layer, such as silicon nitride, is first deposited on all sides of the wafer, followed by the deposition of a robust mechanical layer, such as polycrystalline silicon, over the masking layer on all sides of the wafer. The two layers are sequentially patterned on one side of the wafer and then the wafer is placed into an etchant bath which etches the exposed surface of the wafer and concurrently removes the protective layer, leaving a defect-free masking layer that prevents unintentional etching that would reduce yields of fabricated devices.

REFERENCES:
patent: Re32572 (1988-01-01), Hawkins et al.
patent: 3654000 (1972-04-01), Totah et al.
patent: 4585513 (1986-04-01), Gale et al.
patent: 4683646 (1987-08-01), Kando et al.
patent: 4899181 (1990-02-01), Hawkins et al.
patent: 5006202 (1991-04-01), Hawkins et al.

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