Fabricating method for silicon devices using a two step silicon

Details Fabricating method for silicon devices using a two step silicon Fabricating method for silicon devices using a two step silicon

1990-06-04

1991-04-09

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156647, 156651, 156657, 1566611, 156662, 346140R, H01L 21306, B44C 122, C03C 1500, C03C 2506

Patent

active

050062026

ABSTRACT:
Disclosed is a method of fabricating a precision etched, three dimensional device from a silicon wafer, wherein the etching is done from one side of the wafer using a two step silicon etching process. A two-sided deposition of a robust protective layer, such as polycrystalline silicon, is placed over a two-sided deposition of a chemical masking layer such as silicon dioxide. The two layers are concurrently patterned with first and second sets of vias on one side of the wafer, while the opposite side is protected by the protective layer. The protective layer is removed to permit deposition of a second masking layer such as silicon nitride, followed by deposition of a second protective layer. Again, the second protective layer prevents damage to the fragile second masking layer on the wafer backside while its frontside is patterned with a similar set of vias aligned with the first set of vias in the first masking layer. This similar set of vias is sequentially formed in both the second protective layer and the underlying second masking layers. Then the wafer is placed in an etchant bath so that the first set of recesses is anisotropically etched in the wafer frontside side. Next, the second protective layer and second masking layer are removed to permit anisotropic etching of the second set of recesses through the second set of vias in the first masking layer. If the protective layer is polycrystalline silicon, it is concurrently etch-removed during the initial etching of the silicon wafer.

REFERENCES:
patent: Re32572 (1988-01-01), Hawkins et al.
patent: 3654000 (1972-04-01), Totah et al.
patent: 4585513 (1986-04-01), Gale et al.
patent: 4683646 (1987-08-01), Kando et al.
patent: 4829324 (1989-05-01), Drake et al.
patent: 4863560 (1989-09-01), Hawkins
patent: 4899181 (1990-02-01), Hawkins et al.

Affiliated with

Also associated with

Rating

Fabricating method for silicon devices using a two step silicon does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Fabricating method for silicon devices using a two step silicon , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fabricating method for silicon devices using a two step silicon will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2032615