Fabricating integrated devices using embedded masks

Details Fabricating integrated devices using embedded masks Fabricating integrated devices using embedded masks

2005-03-31

2008-08-12

Geyer, Scott B. (Department: 2812)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S735000, C257SE21331, C257SE21215

Reexamination Certificate

active

07410907

ABSTRACT:
A method of fabricating a device using a multi-layered wafer that has an embedded etch mask adapted to map a desired device structure onto an adjacent (poly)silicon layer. Due to the presence of the embedded mask, it becomes possible to delay the etching that forms the mapped structure in the (poly)silicon layer until a relatively late fabrication stage. As a result, flatness of the (poly)silicon layer is preserved for the deposition of any necessary over-layers, which substantially obviates the need for filling the voids created by the structure formation with silicon oxide.

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