Fabricating electronic-photonic devices having an active...

Details Fabricating electronic-photonic devices having an active... Fabricating electronic-photonic devices having an active...

2009-03-04

2010-11-30

Estrada, Michelle (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S606000, C438S481000, C438S489000, C438S491000, C257SE21117, C257SE21155, C257SE21393, C257SE21398, C257SE31097

Reexamination Certificate

active

07842595

ABSTRACT:
A method for manufacturing an electronic-photonic device. Epitaxially depositing an n-doped III-V composite semiconductor alloy buffer layer on a crystalline surface of a substrate at a first temperature. Forming an active layer on the n-doped III-V epitaxial composite semiconductor alloy buffer layer at a second temperature, the active layer including a plurality of spheroid-shaped quantum dots. Depositing a p-doped III-V composite semiconductor alloy capping layer on the active layer at a third temperature. The second temperature is less than the first temperature and the third temperature. The active layer has a photoluminescence intensity emission peak in the telecommunication C-band.

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