Fabricating a semiconductor device using fully cured...

Details Fabricating a semiconductor device using fully cured... Fabricating a semiconductor device using fully cured...

2005-12-20

2005-12-20

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C430S287100

Reexamination Certificate

active

06977212

ABSTRACT:
The present invention is a method of fabricating a semiconductor device using a fully cured BCB layer and removing the same using wet etching. The first step is selecting a substrate. The second step of the method is producing an oxide layer or other coating on the substrate. The third step is applying a BCB layer on the oxide layer. The fourth step is fully curing the BCB layer. The fifth step is processing the device. The sixth step is stressing the substrate, preferably causing the substrate to warp. The seventh step is wet etching the BCB layer. The eighth step is removing the BCB layer. The ninth step is removing the oxide layer.

REFERENCES:
patent: 5872572 (1999-02-01), Rossignac
patent: 6204081 (2001-03-01), Kim et al.
patent: 6284149 (2001-09-01), Li et al.
patent: 6361926 (2002-03-01), So et al.
patent: 6514872 (2003-02-01), Oikawa
patent: 6763156 (2004-07-01), Palmer et al.
patent: 2002/0105003 (2002-08-01), Yang et al.
patent: 2003/0134496 (2003-07-01), Lee et al.

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