Fabricating a self-aligned bipolar transistor having...

Details Fabricating a self-aligned bipolar transistor having... Fabricating a self-aligned bipolar transistor having...

2007-11-06

2007-11-06

Lee, Calvin (Department: 2818)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Having heterojunction

C257S565000

Reexamination Certificate

active

11175720

ABSTRACT:
According to one exemplary embodiment, a bipolar transistor comprises a base having a top surface. The bipolar transistor further comprises a base oxide layer situated on top surface of the base. The bipolar transistor further comprises a sacrificial post situated on base oxide layer. The bipolar transistor further comprises a conformal layer situated over the sacrificial post and top surface of the base, where the conformal layer has a density greater than a density of base oxide layer. The conformal layer may be, for example, HDPCVD oxide. According to this exemplary embodiment, the bipolar transistor further comprises a sacrificial planarizing layer situated over the conformal layer. The sacrificial planarizing layer has a first thickness in a first region between first and second link spacers and a second thickness in a second region outside of first and second link spacers, where the second thickness is generally greater than the first thickness.

REFERENCES:
patent: 6171910 (2001-01-01), Hobbs et al.
patent: 6524901 (2003-02-01), Trivedi
patent: 2003/0057458 (2003-03-01), Freeman et al.
patent: 2003/0092286 (2003-05-01), Furukawa

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