Fabricating a memory cell array

Details Fabricating a memory cell array Fabricating a memory cell array

2005-09-08

2009-08-04

Luu, Chuong A. (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S302000, C257S306000

Reexamination Certificate

active

07569878

ABSTRACT:
A DRAM memory cell array is fabricated such that, for each memory cell of the array, the gate electrode is initially produced such that it is insulated from all the other gate electrodes assigned to a certain word line, and is only connected to the other gate electrodes assigned to the corresponding word line via the word line in a subsequent step.

REFERENCES:
patent: 6399978 (2002-06-01), Gruening et al.
patent: 6448610 (2002-09-01), Weis
patent: 6552382 (2003-04-01), Wu
patent: 6767789 (2004-07-01), Bronner et al.
patent: 2005/0026359 (2005-02-01), Voigt et al.
patent: 1011755 (2002-05-01), None

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