Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-03-07
2008-11-25
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S296000, C257S298000, C257S306000, C257S308000, C257SE21648, C341S150000
Reexamination Certificate
active
07456462
ABSTRACT:
A layered capacitor having top and bottom plates formed from multiple layers. The capacitor has a bottom layer comprising a bottom plate portion and at least one upper layer, each upper layer comprising top and bottom plate portions. A first set of vias connect the bottom plate portions and a second set of vias connect the top plate portions. The bottom plate portions and the first set of vias comprise a U-shaped bottom plate and the top plate portions and the second set of vias comprise a top plate of the capacitor device. The layers may comprise metal layers produced using semiconductor fabrication methods. Also provided is a capacitor array having two or more capacitors where connectors connect all top plate portions of the capacitors. The capacitor array may be used in a capacitive DAC, which may be used in a SAR ADC.
REFERENCES:
patent: 6690570 (2004-02-01), Hajimiri et al.
patent: 6743671 (2004-06-01), Hu
patent: 2006/0261394 (2006-11-01), Chien
Heshami Mehrdad
Keramat Mansour
Alvand Technologies, Inc.
Pert Evan
Stattler-Suh PC
Tran Tan N
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