F-RAM device with current mirror sense amp

Static information storage and retrieval – Systems using particular element – Ferroelectric

Reexamination Certificate

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Details

C365S189150, C365S189080, C365S189090, C365S207000, C365S210100, C365S214000, C365S065000

Reexamination Certificate

active

07839670

ABSTRACT:
A F-RAM memory device containing a current mirror sense amp. A F-RAM memory device containing a current mirror sense amp coupled to a negative voltage generator. A method of reading data from and restoring data back into F-RAM cells in a 2T2C F-RAM device containing a current mirror sense amp. A method of reading data from and restoring data back into F-RAM cells in a 1T1C F-RAM device.

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patent: 7675795 (2010-03-01), Koyama
Siu et al., “A Current-Based Reference-Generation Scheme for 1T-1C Ferroelectric Random-Access Memories”, IEEE Journal of Solid-State Circuits, Mar. 2003, vol. 38, No. 3, pp. 514-549.
Siu et al., “A 16kb 1T1C FeRAM Testchip Using Current-Based Reference Scheme”, IEEE Custom Integrated Circuits Conference, 2002, pp. 107-110.

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