F-RAM device with current mirror sense amp

Details F-RAM device with current mirror sense amp F-RAM device with current mirror sense amp

2010-08-13

2010-11-23

Nguyen, Viet Q (Department: 2827)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S189150, C365S189080, C365S189090, C365S207000, C365S210100, C365S214000, C365S065000

Reexamination Certificate

active

07839670

ABSTRACT:
A F-RAM memory device containing a current mirror sense amp. A F-RAM memory device containing a current mirror sense amp coupled to a negative voltage generator. A method of reading data from and restoring data back into F-RAM cells in a 2T2C F-RAM device containing a current mirror sense amp. A method of reading data from and restoring data back into F-RAM cells in a 1T1C F-RAM device.

REFERENCES:
patent: 6487130 (2002-11-01), Endo et al.
patent: 6510071 (2003-01-01), Oowaki
patent: 6525956 (2003-02-01), Murakuki
patent: 6538915 (2003-03-01), Endo et al.
patent: 6566698 (2003-05-01), Nishihara et al.
patent: 6707700 (2004-03-01), Kang
patent: 6970371 (2005-11-01), Summerfelt et al.
patent: 6980458 (2005-12-01), Demange et al.
patent: 7180766 (2007-02-01), Morita
patent: 7200029 (2007-04-01), Yoshioka
patent: 7269047 (2007-09-01), Fong et al.
patent: 7443714 (2008-10-01), Kim
patent: 7675795 (2010-03-01), Koyama
Siu et al., “A Current-Based Reference-Generation Scheme for 1T-1C Ferroelectric Random-Access Memories”, IEEE Journal of Solid-State Circuits, Mar. 2003, vol. 38, No. 3, pp. 514-549.
Siu et al., “A 16kb 1T1C FeRAM Testchip Using Current-Based Reference Scheme”, IEEE Custom Integrated Circuits Conference, 2002, pp. 107-110.

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