F ion implantation into oxide films to form low-K intermetal die

Details F ion implantation into oxide films to form low-K intermetal die F ion implantation into oxide films to form low-K intermetal die

1998-09-03

2000-12-12

Elms, Richard

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

438597, 257759, 257346, H01L 2131

Patent

active

061598720

ABSTRACT:
Ion implantation of fluorine into SiO.sub.2 films results in formation of a dielectric material having a dielectric constant K.ltoreq.3.2. High energies associated with ion implantation permit stable introduction of high concentrations of fluorine within silicon oxide, without giving rise to problems of fluorine outgassing and water absorption associated with conventional FSG deposition techniques. Relatively thick FSG layers conventionally formed by CVD may be sandwiched between implanted FSG liner films formed in accordance with the present invention. Such a combination would reduce the dielectric constant of the dielectric structure as a whole while providing a barrier to fluorine diffusion, without consuming the processing time required to implant an entire dielectric layer.

REFERENCES:
patent: 5814863 (1998-09-01), Pan
patent: 5828132 (1998-10-01), Eissa
patent: 5858869 (1999-01-01), Chen et al.
Shapiro, M.J., et al., "CVD of fluorosilicate glass for ULSI applications", Thin Solid Films 270 (1995) Elsevier Scienses S. A., pp. 503-507.
Shimooka, Y., et al., "Fully Planarized High Density Plasma CVD Fluorine-Doped Ild", Jun. 10-12, 1997 VMIC Conference, 1997 ISMIC--107/97/0119(c), pp. 119-124.
Mashiro, S., et al., "Influence of Plasma Parameters on the Stability of FSG Films Prepared by Biased Helicon Plasma CVD", Jun. 10-12, 1997 VMIC Conference, 1997 ISMIC--107/97/0536(c), pp. 536.

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