Extrusion mold and method for growing monocrystalline structures

Details Extrusion mold and method for growing monocrystalline structures Extrusion mold and method for growing monocrystalline structures

1978-12-27

1980-09-30

Bernstein, Hiram H.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

164 60, 164 82, 164415, 164440, 156617H, 156619, 156DIG64, 156DIG73, 156DIG97, 156DIG88, 422246, C30B 1506

Patent

active

042253780

ABSTRACT:
An extrusion mold for growing crystalline silicon in any desired size at a very high purity level. The mold is formed of molybdenum with any desired width, length and depth. The major portion of its length is immersed in a temperature-controlled environment. A high temperature receiving end of the mold is located in a controlled atmosphere containing an inert gas such as nitrogen. Molten silicon is poured from a crucible into the open end of the mold in the controlled atmosphere. The extrusion mold is at an incline to permit the molten silicon to flow through the mold until it contacts a seed crystal of silicon. The seed crystal is located at the point where the silicon solidifies. The molten silicon begins to form a crystalline structure oriented according to the seed crystal. As crystallization takes place, the seed is slowly pulled out of the other end of the extrusion mold which is open to the atmosphere bringing the crystalline silicon structure with it.

REFERENCES:
patent: 2719799 (1955-10-01), Christian

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