Extrinsic gettering of GaAs wafers for MESFETS and integrated ci

Details Extrinsic gettering of GaAs wafers for MESFETS and integrated ci Extrinsic gettering of GaAs wafers for MESFETS and integrated ci

1984-04-23

1985-06-25

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

51281R, 148191, 156643, 156657, B44C 122, C03C 1500, C03C 2506

Patent

active

045252394

ABSTRACT:
A method is disclosed for extrinsically gettering imperfections in a semi-insulating GaAs wafer. This is accomplished by subjecting the semi-insulating GaAs wafers to processing conditions which allow the imperfections to migrate toward a mechanically damaged surface region of the wafer. Migration occurs during a low temperature heat treatment over an extended time period. The GaAs wafer surface is damaged by a bead blasting treatment and subsequently heated to a temperature in the range of 400 to 600 degrees Celsius in a forming gas for a period between 12 to 120 hours. Significant improvements of the GaAs wafer qualities and performance of fabricated MESFET devices are achieved.

REFERENCES:
patent: 3632438 (1972-01-01), Carlson et al.
patent: 3811975 (1974-05-01), Lierop et al.
patent: 3929529 (1975-12-01), Poponiak

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