Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2011-01-18
2011-01-18
Prenty, Mark (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S163000
Reexamination Certificate
active
07871869
ABSTRACT:
An extremely-thin silicon-on-insulator transistor is provided that includes a buried oxide layer above a substrate, a silicon layer above the buried oxide layer, a gate stack on the silicon layer, a nitride liner on the silicon layer and adjacent to the gate stack, an oxide liner on and adjacent to the nitride liner, and raised source/drain regions. The gate stack includes a high-k oxide layer on the silicon layer and a metal gate on the high-k oxide layer. Each of the raised source/drain regions has a first part comprising a portion of the silicon layer, a second part adjacent to parts of the oxide liner and the nitride liner, and a third part above the second part. Also provided is a method for fabricating an extremely-thin silicon-on-insulator transistor.
REFERENCES:
patent: 5116771 (1992-05-01), Karulkar
patent: 6614079 (2003-09-01), Lee et al.
patent: 6653700 (2003-11-01), Chau et al.
patent: 6908850 (2005-06-01), Doris et al.
patent: 7067434 (2006-06-01), Colombo et al.
patent: 7078298 (2006-07-01), Lee et al.
patent: 7202123 (2007-04-01), Pan
patent: 7271446 (2007-09-01), Dokumaci et al.
patent: 7652332 (2010-01-01), Cartier et al.
patent: 2003/0042568 (2003-03-01), Jang
patent: 2005/0167741 (2005-08-01), Divakaruni et al.
Cartier Eduard A.
Koester Steven J.
Maitra Kingsuk
Majumdar Amlan
Mo Renee T.
Bongini Stephen
Fleit Gibbons Gutman Bongini & Bianco PL
International Business Machines - Corporation
Prenty Mark
LandOfFree
Extremely-thin silicon-on-insulator transistor with raised... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Extremely-thin silicon-on-insulator transistor with raised..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Extremely-thin silicon-on-insulator transistor with raised... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2625963