X-ray or gamma ray systems or devices – Specific application – Lithography
Patent
1997-12-01
1999-11-02
Porta, David P.
X-ray or gamma ray systems or devices
Specific application
Lithography
378 35, 378 84, G21K 106
Patent
active
059784415
ABSTRACT:
A reflective element for extreme ultraviolet semiconductor lithography systems substantially minimizes the phase transitions of reflected extreme ultraviolet light by a reflective multilayer coating on an extremely planar surface which is parallel to a family of (111) crystallographic planes of a single crystal silicon wafer. The extremely planar surface is made by using three of the families of (111) crystallographic planes of the single crystal silicon as etch barriers for anisotropic etchants.
REFERENCES:
patent: 5052033 (1991-09-01), Ikeda et al.
patent: 5468337 (1995-11-01), Miyatake
patent: 5485499 (1996-01-01), Pew et al.
patent: 5514499 (1996-05-01), Iwamatsu et al.
patent: 5528654 (1996-06-01), Niibe et al.
patent: 5757883 (1998-05-01), Haisma et al.
Early, Experimental Characterization and Physical Modeling of Resolution Limits in Proximity Printing X-Ray Lithography, RLE Technical Report No. 565, Aug. 1991, pp. 2,139-154, Massachusetts Institute of Technology, Cambridge, MA.
Seidel et al, "Anisotropic Etching of Crystalline Silicon in Alkaline Solutions," J. Electrochem Soc., vol. 137, No. 11, Nov. 1990, pp. 3612-3626.
Ceglio et al, "Soft-X-Ray Projection Lithography System Design," OSA Proceedings on Soft-X-Ray Projection Lithography, 1991, vol. 12, pp. 5-10.
Wood et al, "High-Resolution Soft-X-Ray Projection Imaging," OSA Proceedings on Soft-X-Ray Projection Lithography, 1991, vol. 12, pp. 2-4.
Nguyen et al, "Imaging of EUV Lithographic Masks with Programmed Substrate Defects," OSA Proceedings on Extreme Ultraviolet Lithography, 1994, vol. 23, pp. 193-203.
Nguyen et al, "Areal Images of EUV Projection Lithography Masks with Defects in Reflective Coatings: Electromagnetic Simulation," OSA Proceedings on Soft-X-Ray Projection Lithography, 1993, vol. 18, pp. 47-53.
Nguyen et al, "Printability of substrate and absorber defects on extreme ultraviolet lithographic masks," J.Vac. Sci. Technol. B 13(6), Nov./Dec. 1995, pp. 3082-3088.
Tennant et al, "Defect repair for soft-x-ray projection lithography masks," J. Vac. Sci. Technol. B 10(6), Nov./Dec. 1992, pp. 3134-3140.
Patent Abstracts of Japan vol. 015, No. 387 (E-1117), Sep. 30, 1991, Abstract of JP 03 155120 A (Seiko Epson Corp.), Jul. 3, 1991.
Advanced Micro Devices , Inc.
Ishimaru Mikio
Porta David P.
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