Extended drain resurf lateral DMOS devices

Details Extended drain resurf lateral DMOS devices Extended drain resurf lateral DMOS devices

1995-06-07

1996-12-17

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257316, 257335, 257336, 257344, 257395, 257401, 257408, H01L 2976

Patent

active

055856608

ABSTRACT:
A high voltage PMOS or NMOS transistor 7 has improved on-resistance by truncating gate field oxide 43 so that drain region 42 may be implanted closer to channel region 49 than possible otherwise. By shortening the physical distance d2 between drain 42 and channel region 49, the drain to source on-resistance of the high voltage device is reduced and the performance of high voltage device 7 is thereby improved.

REFERENCES:
patent: 5246870 (1993-09-01), Merchant
C. A. T. Salama, "Lateral Silcon Devices and High Voltage Integrated Circuits", May 1993.
Zahr Parpia and C. A. T. Salama, "Optimization of Resurf LDMOS Transistors: An Analytical Approach," IEEE Transactions on Electron Devices, vol. 37, No. 3, Mar. 1990.
Taylor Efland, et al, "An Optimized Resurf LDMOS Power Device Module Compatible with Advanced Logic Processes," Texas Instruments Incorporated, Dec. 1992.
Professor B. Jayant Baliga, "Smart Power Technology: An Elephantine Opportunity" (Invited Plenary Session Paper), IEDM 90-3, 1990 IEEE, pp. 1.1.1-1.1.4. no month.
Habekotte, et al., "A Coplanar CMOS Power Switch," IEEE J. Solid-State Circuits, vol. SC-16, pp. 212-226, Jun. 1981.
J. A. Appeals and H. JM. J. Vaes, High Voltage Thin Layer Devices (Resurf Devices), IEDM Proceedings 1979, pp. 238-241. no month.

Affiliated with

Also associated with

Rating

Extended drain resurf lateral DMOS devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Extended drain resurf lateral DMOS devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Extended drain resurf lateral DMOS devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1993570