Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1989-06-13
1992-11-03
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257901, 257349, H01L 2701, H01L 2910
Patent
active
051609894
ABSTRACT:
A semiconductor over insulator transistor is provided preferably of a lightly doped drain ("LDD") profile. LDD transistor (74) includes a semiconductor mesa (76) formed over an insulating layer (94) which overlies a semiconductor substrate (96). Semiconductor mesa (76) includes a source region (78) and a drain region (80) at opposite ends thereof. A body node (82) is disposed between source and drain regions (78,80). A low resistance contact region (98) lies along substantially the entire width of body region (82) and contacts a vertical contact which permits electrical contact from the top surface of semiconductor mesa (76) to low resistance contact region (98). Low resistance contact region (98) may be extended to fully underlie source region (78) such that the vertical contact may be moved away from body node (82).
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Barndt B. Peter
Donaldson Richard L.
Matsil Ira S.
Prenty Mark V.
Texas Instruments Incorporated
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