Exposure system

X-ray or gamma ray systems or devices – Specific application – Lithography

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Details

378205, G21K 500

Patent

active

052767256

ABSTRACT:
An exposure apparatus usable with a mask having a pattern and a wafer having a radiation-sensitive surface layer, for transferring with a radiation energy beam the pattern of the mask to the wafer, is disclosed. The apparatus includes a mask supporting member for supporting the mask; a wafer supporting member for supporting the wafer; a reflective member having a reflection surface and an indication pattern, the reflective member being supported by one of the mask supporting member and the wafer supporting member; an arrangement for projecting a beam, which is thinner than the radiation energy beam and which advances along or about the axis of the radiation energy beam, upon the reflective member; a device for observing a positional relationship between the indication pattern and a spot formed by projection of the thinner beam upon the reflective member; and a device for correcting a relationship between the indication pattern and the spot, on the basis of the observation.

REFERENCES:
patent: 4513203 (1985-04-01), Bohlen et al.
patent: 4524280 (1985-06-01), Ishikawa
patent: 4703166 (1987-10-01), Bruning
patent: 4724466 (1988-02-01), Ogawa et al.
patent: 4777641 (1988-10-01), Inagaki et al.
patent: 4803713 (1989-02-01), Fujii
patent: 4856037 (1989-08-01), Mueller et al.
Betz, H., et al., "Resolution limits in x-ray lithography calculated by means of x-ray lithography simulator XMAS", Journal of Vacuum Science and Technology, Jan.-Feb. 1986, vol. 4, No. 1, pp. 248-252.

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