Exposure of uniform fine pattern on photoresist

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Processing feature prior to imaging

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430 30, 430311, 430394, 355 30, 355 53, G03C 500

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047043482

ABSTRACT:
Exposure of fine patterns on a photoresist is carried out by controlling the humidity and temperature of a gas to be supplied to an exposure apparatus separate from the ambient atmosphere.
Temperature of the atmosphere at least in the vicinity of a photoresist is controlled in a predetermined range and air or gas to be supplied to the exposure space is humidified to a desired degree.
Water content in the photoresist is kept uniform and constant by the specially controlled atmosphere and enables uniform pattern width of the exposed fine pattern all over the photoresist surface.

REFERENCES:
patent: 3620621 (1971-11-01), Rachwal et al.
patent: 4026653 (1977-05-01), Appelbaum et al.
patent: 4423137 (1983-12-01), Rester
Pacansky et al., "Photochemical Decomposition Mechanisms For AZ Type Photoresist," IBM J. Res. Develop vol. 23 (1) Jan. 1979, pp. 42-55.

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