Exposure method and apparatus

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device

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430394, 430396, G03F7/20

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active

059027169

ABSTRACT:
After a photoresist is applied onto a wafer, a contrast enhancement material (CEM) layer is applied onto this photoresist. A pattern is projected through this CEM layer onto the photoresist. Next, this CEM layer is removed from the photoresist and thereafter a new CEM layer is again applied onto the photoresist. Another pattern is projected through this new CEM layer onto the photoresist, whereby the photoresist is exposed in accordance with a composite pattern of the two patterns. This composite pattern can surpass the resolution limit of projection optical system.

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Nakase et al, "Evaluation of Contrast-Enhancing Layer Using the ABC Model", Toshiba VLSI Research Ctr. Research and Dev. Ctr., ICICE Technical research report vol. 84, No. 241, published Dec. 18, 1984.
B F Griffing, et al, "Contrast Enhanced Photolithography", IEEE Electron Device Letters, vol. EDL-4, No. 1, Jan. 1983, pp. 14-16.
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Nakase, et al., "Contrast-enhancing Layer (CEL Evaluation of Contrast-enhancing Layer Using the ABC Model", Toshiba VLSI Research Center R&D Center, pp. 1-8.

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