Exposure method, aligner, and method of manufacturing semiconduc

Details Exposure method, aligner, and method of manufacturing semiconduc Exposure method, aligner, and method of manufacturing semiconduc

1999-02-25

2000-02-01

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

G03F 900

Patent

active

060201096

ABSTRACT:
To prevent positional shifts of the image forming plane during the exposure process using the two-layer phase shift mask, the height position of the semiconductor wafer 14 is moved in the optical axis direction according to the mask substrate thickness of the second component mask 12b, prior to performing the exposure process which uses the stacked-layer mask 12 that comprises a first component mask 12a formed with a pattern of light-shielding areas and light-transmitting areas and a second component mask 12b formed with a phase shift pattern to produce a phase shift in the transmitted light.

REFERENCES:
patent: 5045417 (1991-09-01), Okamoto
patent: 5234780 (1993-08-01), Nitayama et al.
patent: 5248575 (1993-09-01), Ogoshi
patent: 5326659 (1994-07-01), Liu et al.
patent: 5358808 (1994-10-01), Nitayama et al.
patent: 5418092 (1995-05-01), Okamoto

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