Exposure mask pattern correction method, pattern formation...

Details Exposure mask pattern correction method, pattern formation... Exposure mask pattern correction method, pattern formation...

2002-04-23

2003-09-16

Garbowski, Leigh M. (Department: 2825)

Computer-aided design and analysis of circuits and semiconductor

Nanotechnology related integrated circuit design

C716S030000, C430S005000

Reexamination Certificate

active

06622296

ABSTRACT:

CROSS-REFERENCE TO RELATED APPLICATIONS
This application is based upon and claims the benefit of priority from the prior Japanese Patent Application No. 2001-124683, filed Apr. 23, 2001, the entire contents of which are incorporated herein by reference.
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to an exposure mask pattern correction method, pattern formation method, and a program product for operating a computer and, more particularly, to an exposure mask pattern correction method of reducing the influence of the optical proximity effect, a pattern formation method, and a program product for operating a computer.
2. Description of Related Art
In recent years, demands have arisen more and more for miniaturizing the circuit patterns of semiconductor devices. Along with this, even if an exposure mask is prepared in accordance with a design pattern, the pattern of the design pattern cannot be formed on a wafer. This phenomenon is called OPE (Optical Proximity Effect) on the wafer.
OPEs are roughly classified into one caused by the mask process, one caused by the lithography process, and one caused by the etching process. More specifically, in the lithography process, OPE occurs due to the resist developing. In the etching process, OPE occurs due to loading effect. In the lithography process, OPE occurs due to an optical factor. In the mask and etching processes, OPE is not caused by any optical factor.
As a technique of correcting OPE, various OPCs (Optical Proximity Corrections) have been proposed.
FIG. 16
shows a sequence of preparing of a correction rule (to be referred to as an OPC rule hereinafter for a rule-based OPC) or a correction model (to be referred to as an OPC model hereinafter for the rule-based OPC) for performing OPC, and feedback of the OPC rule or OPC model (OPC rule/model) to a product.
As shown in
FIG. 16
, when an OPC rule/model is to be prepared, an evaluation mask called an OPC TEG mask is prepared by using design data and the same etching process as that of the product. A resist pattern is formed on a wafer by using the evaluation mask and the same lithography process as that of the product. The wafer is processed by using the resist pattern and the same etching process as that of the product, thereby preparing an evaluation wafer. After that, the evaluation wafer undergoes OPE evaluation. A rule/model for making the pattern formed on the evaluation wafer coincide with the pattern of the design data, i.e., an OPC rule/model is prepared. The OPC rule/model is applied to the preparation of the main body mask of the product.
FIG. 17
shows a method of obtaining a conventional OPC model. In this method, coefficients Ci and &Dgr;Li of a multi-Gaussian function G are so selected as to make a wafer size (CD
exp
) obtained by an experiment and a wafer size (CD
sim
) obtained by calculation coincide with each other (CD
exp
=CD
sim
).
A group of unit processes (mask process, lithography process, etching process, and the like) for a product subjected to OPC and a group of unit processes for an evaluation mask prepared to form an OPC rule/model must be the same.
This is because, if these unit process groups are different from each other, the OPE of the evaluation wafer and that of the product become different from each other. The prepared OPC rule/model may become invalid.
A plurality of unit processes (mask process, lithography process, and etching process) which constitute the unit process group for the product are being improved with the flow of development. Even after the OPC rule/model is determined once, any of the unit processes for the process may be changed.
In this case, in the prior art, a new evaluation wafer is prepared by using the same unit process group as that for the product including the changed unit process. A new OPC rule/model is prepared from the OPE evaluation result of the evaluation wafer.
However, a long time is taken to prepare an OPC rule/model. Then, it causes a problem that a long time is required to practice a product pattern formation method which reflects the new OPC rule/model.
BRIEF SUMMARY OF THE INVENTION
An exposure mask pattern correction method according to an aspect of the present invention comprises preparing a unit process group which includes a plurality of unit processes to form a pattern on a substrate by using an exposure mask, the plurality of unit processes including a unit process concerning manufacture of the exposure mask, a unit process concerning lithography using the exposure mask, and a unit process concerning etching of the substrate; setting a correction rule or a correction model to perform an optical proximity effect correction for the exposure mask by using first and second optical proximity effects data when a change is arisen in at least one of the plurality of unit processes, the first optical proximity effect data being data concerning an optical proximity effect caused by the at least one unit process before the change, and the second optical proximity effect data being data concerning an optical proximity effect caused by the at least one unit process after the change; and performing the optical proximity effect correction for the exposure mask by using the correction rule or the correction model.
A semiconductor device manufacturing method according to an aspect of the present invention comprises preparing a unit process group which includes a plurality of unit processes to form a pattern on a substrate by using an exposure mask, the plurality of unit processes including a unit process concerning manufacture of the exposure mask, a unit process concerning lithography using the exposure mask, and a unit process concerning etching of the substrate; setting a correction rule or a correction model to perform an optical proximity effect correction for the exposure mask by using first and second optical proximity effects data when a change is arisen in at least one of the plurality of unit processes, the first optical proximity effect data being data concerning an optical proximity effect caused by the at least one unit process before the change, and the second optical proximity effect data being data concerning an optical proximity effect caused by the at least one unit process after the change; performing the optical proximity effect correction for the exposure mask by using the correction rule or the correction model; and forming the pattern on the substrate by using the exposure mask having undergone the optical proximity effect correction.
A program product for operating a computer according to an aspect of the present invention comprises a computer readable medium; a first program instruction which is recorded on the medium and causes the computer to load a unit process group that includes a plurality of unit processes to form a pattern on a substrate by using an exposure mask, the plurality of unit processes including a unit process concerning manufacture of the exposure mask, a unit process concerning lithography using the exposure mask, and a unit process concerning etching of the substrate; and a second program instruction which is recorded on the medium and used to set a correction rule or a correction model to perform an optical proximity effect correction for the exposure mask by using first and second optical proximity effects data when a change is arisen at least one of the plurality of unit processes, the first optical proximity effect data being data concerning an optical proximity effect caused by the at least one unit process before the change, and the second optical proximity effect data being data concerning an optical proximity effect caused by the at least one unit process after the change.


REFERENCES:
patent: 6077310 (2000-06-01), Yamamoto et al.
patent: 6335130 (2002-01-01), Chen et al.
patent: 6541167 (2003-04-01), Petersen et al.
patent: 9-319067 (1997-12-01), None
patent: 11-168065 (1999-06-01), None
Liebmann et al., “Optical Proximity Correction, a First Look at Manufacturability”, in14thAnnual BACUS Symposium on Photomask

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