Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2006-04-04
2006-04-04
Pham, Long (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S158000, C438S166000, C438S301000, C438S486000, C438S487000, C438S517000, C438S535000
Reexamination Certificate
active
07022556
ABSTRACT:
The present invention provides a highly controllable device for exposure from the back side and an exposure method, and also provides a method of manufacturing a semiconductor device using the same. The present invention involves exposure with the use of the back side exposure device of which a reflecting means is disposed on the front side of a substrate, apart from a photosensitive thin film surface by a distance X(X=0.1 μm to 1000 μm), and formation of a photosensitive thin film pattern in a self alignment manner, with good controllability, at a position a distance Y away from the end of a pattern. The invention fabricates a TFT using that method.
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Cook Alex McFarron Manzo Cummings & Mehler, Ltd.
Pham Long
Rao Shriniivas
Semiconductor Energy Laboratory Co,. Ltd.
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