Exposure control for phase shifting photolithographic masks

Details Exposure control for phase shifting photolithographic masks Exposure control for phase shifting photolithographic masks

2008-04-07

2009-12-08

Huff, Mark F (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

C430S394000

Reexamination Certificate

active

07629109

ABSTRACT:
Mask and integrated circuit fabrication approaches are described to facilitate use of so called “full phase” masks. This facilitates use of masks where substantially all of a layout is defined using phase shifting. In one embodiment, the phase shifting mask and the trim mask are exposed using substantially the same exposure conditions. These approaches facilitate better exposure profiles for the resulting ICs and can thus improve chip yield and increase throughput by reducing the need to alter settings and/or switch reticles between exposures.

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