Exposure apparatus inspection method and method for...

Optics: measuring and testing – Lens or reflective image former testing – For optical transfer function

Reexamination Certificate

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Reexamination Certificate

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08085393

ABSTRACT:
A mask pattern includes a first pattern having a line-and-space pattern extending in a first direction, a second pattern formed as a line-and-space pattern having a larger period than the first pattern and extending in the first direction, a third pattern having a line-and-space pattern extending in a second direction, and a fourth pattern formed as a line-and-space pattern having a larger period than the third pattern and extending in the second direction. Illumination light is obliquely incident on the first pattern and the second pattern from a first oblique direction, illumination light is obliquely incident on the third pattern and the fourth pattern from a second oblique direction, and a relative distance from the first pattern to the second pattern transferred on to an image receptor and a relative distance from the third pattern to the fourth pattern transferred onto the image receptor are measured and an optical characteristic of an exposure apparatus is ascertained based on the relative distances.

REFERENCES:
patent: 2002/0015158 (2002-02-01), Shiode et al.
patent: 2004/0214095 (2004-10-01), Nakao
patent: 2009/0021711 (2009-01-01), Sato et al.
patent: 11-237310 (1999-08-01), None
patent: 2000-36460 (2000-02-01), None
patent: 2002-289503 (2002-10-01), None
patent: 2003-142385 (2003-05-01), None
Decision of Refusal issued by the Japanese Patent Office on May 18, 2011, for Japanese Patent Application No. 2008-253537, and English-language translation thereof.
Notification of Reason(s) for Refusal issued by the Japanese Patent Office on Dec. 14, 2010, for Japanese Patent Application No. 2008-253537, and English-language translation thereof.

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