Exposure apparatus for synchrotron radiation lithography

X-ray or gamma ray systems or devices – Specific application – Lithography

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378 84, 378 85, G21K 500

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active

061671118

ABSTRACT:
An apparatus for transferring a pattern of a mask onto a substrate with radiation light from a synchrotron radiation light source, includes a first mirror for collectively reflecting radiation light from the synchrotron radiation light source, and a second mirror for reflecting radiation light from the first mirror and for projecting the same to the mask. When a light ray advancing from a light emission point of the light source toward a center of a predetermined region of the mask, to be transferred to the substrate, is taken as a chief ray, when a normal to each of the first and second mirrors at an incidence position of a corresponding chief ray is taken as a Z axis, when a direction perpendicular to a plane defined by the Z axis of each mirror and a corresponding chief ray is taken as an X axis, and when a Y axis is taken along a direction perpendicular to the Z axis and X axis of each mirror, the first mirror has a reflection surface of a shape which is concave with respect to the X axis direction and concave with respect to the Y axis direction, while the second mirror has a reflection surface of a shape which is convex with respect to the Y axis direction.

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